Rogue wave recurrence inHEMT
DOI:
https://doi.org/10.21533/pen.v2.i2.1839Abstract
The GaN semiconductor bulk plasma is examined through developing a quantum hydrodynamicmodel and taking into
account the electrons/holes degenerate pressure, Bohm potential, and theexchange/correlation effect. The basic set of
quantum fluid equations is reduced to the nonlinearSchrödinger equation (NLSE). Numerical analysis of the latter
predicts the rough (in) stabilitydomains, which allow for the rogue waves to occur. Our results are employed to explore
the GaNhigh electron mobility transistors (HEMTs) and their intrinsic problems in high frequency/powerapplications. A
physical solution is suggested rather than engineering due to the GaN HEMTsdrawbacks.
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