Rogue wave recurrence inHEMT

Mohamed Elsayed Yahia, Waleed Moslem Moslem


The GaN semiconductor bulk plasma is examined through developing a quantum hydrodynamicmodel and taking into account the electrons/holes degenerate pressure, Bohm potential, and theexchange/correlation effect. The basic set of quantum fluid equations is reduced to the nonlinearSchrödinger equation (NLSE). Numerical analysis of the latter predicts the rough (in) stabilitydomains, which allow for the rogue waves to occur. Our results are employed to explore the GaNhigh electron mobility transistors (HEMTs) and their intrinsic problems in high frequency/powerapplications. A physical solution is suggested rather than engineering due to the GaN HEMTsdrawbacks.



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Copyright (c) 2014 Periodicals of Engineering and Natural Sciences (PEN)

ISSN: 2303-4521

Digital Object Identifier DOI: 10.21533/pen

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This work is licensed under a Creative Commons Attribution 4.0 International License